Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II: Volume 415

The use of high-performance ceramic materials in microelectronics holds the potential for the development of a wide range of novel, high-value products. For example, ferroelectric ceramic capacitors are key to the development of high-density ferroelectric nonvolatile memory (FRAM). High-dielectric constant para-electric capacitors are potentially useful for the production of high-density dynamic random access memory (DRAM) and for decoupling capacitors in high-speed microprocessors. Electro-optic materials are useful as waveguides, tunable filters and switches in advance communication applications. Researchers come together in this book to discuss both the application of metal-organic chemical vapor deposited (MOCVD) materials to microelectronics and the 'nuts and bolts' of the technique. A wide variety of opto-electronic, superconducting, ferroelectric and other advanced ceramic materials are discussed. Problems of dealing with low-volatility precursors, design of new precursors, and characterization of CVD processes are addressed. Topics include: nonoxide ceramics; precursor chemistry and delivery; process analysis and characterization; and oxide ceramics.