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Investigation Of AlN Films And Creating Devices Based On Them
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58 b
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Progress of the modern means of communication, which mostly involves the increase of operating frequency of devices, dictates the necessity of implementing new materials that would allow to access higher frequencies in the microwave band. A number of exceptional characteristics make aluminum nitride a quite perspective material for a great variety of implementations, especially for creating acoustoelectronic devices. The goals of the present work were studying the processes of acquiring the aluminum nitride thin films using RF magnetron sputtering technique and investigating the possibilities of applying these films to create acoustoeletronic devices working on microwave and extremely high frequencies.
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