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Impact Ionization
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Impact ionization has been drawing considerable§attention since the beginning of investigations of§hot carrier transport. However, impact ionization§rates reported in the literature often differ by§several orders of magnitude, giving rise to the need§for thorough numerical studies. This book briefly§introduces the theory needed for a physical§understanding of the impact ionization process in§semiconductors. It focuses however on computational§aspects and empirical numerical studies explaining a§way to efficiently calculate impact ionization§rates, especially applied to silicon for§semiconductor device simulation. In-depth formulae§and numerical values make it an invaluable source of§information for both physicists and engineers in the§field.
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